Method of optimizing crystal grain size in polycrystalline silicon films
作者： Tolis Voutsas
DOI:
关键词: Materials science 、 Optoelectronics 、 Active devices 、 Annealing (metallurgy) 、 Crystal growth 、 Grain size 、 Crystallography 、 Excimer laser 、 Polycrystalline silicon 、 Liquid-crystal display 、 Nanocrystalline silicon
摘要: A method is provided for optimizing the crystal drain size in polycrystalline silicon films deposited on transparent substrates suitable manufacture of liquid displays. film microcrystalline a substrate manner which yields microcrystallites embedded during deposit. By means excimer laser anneal, or another annealing method, partially melted to leave portion unmelted upon completion anneal. The then allowed crystallize by growth from that remain film. result high quality having large grain sizes active devices, such as TFTs.
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