作者: Bhushan L. Sopori
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摘要: A semiconductor device having a substrate, conductive intermediate layer deposited onto said wherein the serves as back electrode, an optical reflector, and interface for impurity gettering, layer, has grain size at least large thickness, preferably about ten times thickness. The is formed by depositing metal on semiconductive material metal-coated substrate to produce composite structure, then optically processing structure illuminating it with infrared electromagnetic radiation according unique time-energy profile that first produces pits in backside surface of material, thin, highly reflective, low resistivity alloy over entire area between finally grain-enhanced layer. includes increasing energy level initiate pit formation create desired density, ramping up second which heated interfacial melt, reducing third holding period time allow enhancement