Formation of electromigration resistant aluminum alloy conductors
作者： Janet M. Towner , Everhardus P. G. T. van de Ven
DOI:
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摘要: Electromigration resistance of aluminum alloy conductors in semiconductor devices is found to significantly increase by rapidly annealing the employing an cycle with a peak temperature 520°-580° C. and time about 5 30 seconds such as developed high intensity CW lamps.
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