Aluminum alloy line resistive to stress migration formed in semiconductor integrated circuit
作者： Yasushi Higuchi , Kazunori Kawamoto , Ryoichi Kubokoya
DOI:
关键词:
摘要: A first PSG film having a control hole is formed on silicon substrate circuit, and aluminum alloy line layer resistive to stress migration made of Al-Si the film, so as electrically contact, via contact hole, surface semiconductor substrate. The by use sputtering method, crystal face oriented, mainly in (111) plane, controlling temperature at time sputtering, well Ar gas pressure, depositing rate, degree vacuum prior commencement depositing. grain size l set satisfy "(W/14)
lens.org 参考文章(9)
Paul Siu-Chung Ho, James Kent Howard, Intermetallic compound layer in thin films for improved electromigration resistance ,(1975)
Masaharu Yorikane, Noboru Ohseki, Titanium coated aluminum leads ,(1983)
Sheila Vaidya, Tan T. Sheng, Ashok K. Sinha, Solid state device with conductors having chain-shaped grain structure ,(1981)
Kenji Hinode, Kiichiro Mukai, Yoshio Homma, Natsuki Yokoyama, Titanium nitride film in contact hole with large aspect ratio ,(1988)
Fritz L. Schuermeyer, Method of making self-aligned IGFET Air Force Interim Report. ,(1982)
J. Curry, G. Fitzgibbon, Y. Guan, R. Muollo, G. Nelson, A. Thomas, New Failure Mechanisms in Sputtered Aluminum-Silicon Films 22nd International Reliability Physics Symposium. pp. 6- 8 ,(1984) , 10.1109/IRPS.1984.362013
Janet M. Towner, Everhardus P. G. T. van de Ven, Formation of electromigration resistant aluminum alloy conductors ,(1985)
Satoru Isomura, Hiromichi Enami, Kiyoji Ikeda, Yoichi Tamaki, Akihisa Uchida, Katsumi Ogiue, Toru Koizumi, Kaoru Ohgaya, Toru Nakamura, Shinji Nakajima, Semiconductor integrated circuit with dummy pedestals ,(1988)
Masanori Odaka, Takahisa Nitta, Katsumi Ogiue, Kazumichi Mitsusada, Masato Iwabuchi, Method of making semiconductor integrated circuit device ,(1978)