Transport properties of two-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots

摘要: Transport properties of two‐dimensional electron gas (2DEG) are studied in selectively doped GaAs/n‐AlGaAs heterojunctions, which nanometer‐scale InAs dots embedded the vicinity GaAs channel. When distance Wd between dot layer and channel is reduced from 80 to 15 nm, mobility μ electrons at 77 K decreases drastically 1.1×105 1.1 ×103 cm2/V s, while carrier concentration increases 1.1×1011 5.3×1011 cm−2. Such a reduction found only when average thickness above onset level (∼1.5 monolayer) for formation. Origins these changes Ns discussed connection with dot‐induced modulations electronic potential V(r)