The Optical Properties on Conversion of 3C-SiC Thin Film Based on Si Substrate by LPCVD

摘要: In this article,the 3C-SiC film grown on Si substrate by LPCVD,using methane and hydrogen gas mixture as carbon source,has been studied.The was characterized XRD,XPS、SEM、FT-IR PL spectroscopy.It found that the morphology crystal quality of thin were influenced growth temperature,and FT-IR reflection peak intensity 780 cm-1 also temperature film;at room temperature,there are a strong blue band fluorescence film.