Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method
作者： Meng-Meng Cao , Xiao-Ru Zhao , Li-Bing Duan , Jin-Ru Liu , Meng-Meng Guan
DOI: 10.1088/1674-1056/23/4/047805
关键词: Photoluminescence 、 Doping 、 Thin film 、 Wurtzite crystal structure 、 Conductivity 、 Materials science 、 Annealing (metallurgy) 、 Electrical resistivity and conductivity 、 Sol-gel 、 Analytical chemistry
摘要: Sb-doped ZnO thin films with different values of Sb content (from 0 to 1.1 at.%) are deposited by the sol–gel dip-coating method under sol concentrations. The effects Sb-doping content, concentration, and annealing ambient on structural, optical, electrical properties investigated. results X-ray diffraction ultraviolet-visible spectroscopy (UV-VIS) spectrophotometer indicate that each all retains wurtzite structure possesses a preferred orientation along c axis, high transmittance (> 90%) in visible range. Hall effect measurements show vacuum annealed synthesized concentration 0.75 mol/L have an adjustable n-type conductivity varying density, photoluminescence (PL) spectra revealed defect emission (around 450 nm) is predominant. However, prepared 0.25 mol/L, despite their poor conductivity, priority ultraviolet emission, PL peak position shows first blue-shift then red-shift increase doping content.
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