Optical and electrical properties of gallium-doped MgxZn1―xO
作者： Wei Wei , Chunming Jin , Jagdish Narayan , Roger J. Narayan
DOI: 10.1063/1.3271415
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摘要: In this study, the optical and electrical properties of epitaxial single crystal gallium-doped MgxZn1−xO thin films grown on c-plane sapphire substrates by pulsed laser deposition were investigated. these films, Ga content was varied from 0.05 to 7 at. % Mg 5 15 at. %. X-ray diffraction showed that solid solubility limit in is less than 3 The absorption spectra fitted examine doping effects bandgap band tail characteristics. Distinctive trends characteristics determined with below above engineering transparency evaluated using transmission spectra. Carrier concentration Hall mobility data obtained as functions content. significantly degraded when exceeded Correlations between conduction mechanisms gallium d...
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