Role of twin boundaries in semiconductor to metal transition characteristics of VO2 films
作者： Tsung-Han Yang , Chunming Jin , Honghui Zhou , Roger J. Narayan , J. Narayan
DOI: 10.1063/1.3481075
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摘要: Epitaxial (002) VO2 films were grown on c-sapphire with Ga:ZnO and ZnO buffer layers. We investigated the influence of twin boundaries semiconductor-to-metal transition (SMT) characteristics VO2, when current flows parallel perpendicular to boundaries. The structure boundary was kept same for these two configurations. hysteresis in SMT is considerably reduced compared that normal direction present a model explain observations discuss role characteristics, importance grain engineering design based devices.
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