In situ x-ray diffraction studies on epitaxial VO2 films grown on c-Al2O3 during thermally induced insulator-metal transition
作者： Kunio Okimura , Joe Sakai , Shriram Ramanathan
DOI: 10.1063/1.3327422
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摘要: The structural phase transition (SPT) of VO2 films epitaxially grown on c-Al2O3 substrates by pulsed laser deposition and reactive sputtering was investigated in situ temperature-controlled x-ray diffraction (XRD) across metal-insulator (MIT). An intermediate insulator observed between room temperature monoclinic high metallic tetragonal phase. Gaussian curve fittings for measured XRD patterns revealed a significant contribution the covering wide range MIT. Polycrystalline Si pure rutile after MIT contrast with epitaxial substrates. Strained structure could be mechanism formation such known as M2 Presence highly oriented may an important factor understanding relation SPT.
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K. L. Holman, T. M. McQueen, A. J. Williams, T. Klimczuk, P. W. Stephens, H. W. Zandbergen, Q. Xu, F. Ronning, R. J. Cava, Insulator to correlated metal transition in V1?xMoxO2 Physical Review B. ,vol. 79, pp. 245114- ,(2009) , 10.1103/PHYSREVB.79.245114
Y. Muraoka, Z. Hiroi, Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates Applied Physics Letters. ,vol. 80, pp. 583- 585 ,(2002) , 10.1063/1.1446215
Kyu Won Lee, Hyocheon Kweon, Jitae Park, Cheol Eui Lee, Charge and spin dynamics in VO2 nanorods Applied Physics Letters. ,vol. 94, pp. 233111- ,(2009) , 10.1063/1.3152780
Yuzo Shigesato, Mikiko Enomoto, Hidehumi Odaka, Thermochromic VO2Films Deposited by RF Magnetron Sputtering Using V2O3or V2O5Targets Japanese Journal of Applied Physics. ,vol. 39, pp. 6016- 6024 ,(2000) , 10.1143/JJAP.39.6016
Ningyi Yuan, Jinhua Li, Ge Li, Xiaoshuang Chen, The large modification of phase transition characteristics of VO2 films on SiO2/Si substrates Thin Solid Films. ,vol. 515, pp. 1275- 1279 ,(2006) , 10.1016/J.TSF.2006.03.015
F. J. Morin, Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature Physical Review Letters. ,vol. 3, pp. 34- 36 ,(1959) , 10.1103/PHYSREVLETT.3.34
M. Marezio, D. B. McWhan, J. P. Remeika, P. D. Dernier, Structural Aspects of the Metal-Insulator Transitions in Cr-Doped V O 2 Physical Review B. ,vol. 5, pp. 2541- 2551 ,(1972) , 10.1103/PHYSREVB.5.2541
Bong-Jun Kim, Yong Wook Lee, Sungyeoul Choi, Jung-Wook Lim, Sun Jin Yun, Hyun-Tak Kim, Tae-Ju Shin, Hwa-Sick Yun, Micrometer x-ray diffraction study of VO 2 films: Separation between metal-insulator transition and structural phase transition Physical Review B. ,vol. 77, pp. 235401- ,(2008) , 10.1103/PHYSREVB.77.235401
Joe Sakai, High-efficiency voltage oscillation in VO2 planer-type junctions with infinite negative differential resistance Journal of Applied Physics. ,vol. 103, pp. 103708- ,(2008) , 10.1063/1.2930959
S. Shin, S. Suga, M. Taniguchi, M. Fujisawa, H. Kanzaki, A. Fujimori, H. Daimon, Y. Ueda, K. Kosuge, S. Kachi, Vacuum-ultraviolet reflectance and photoemission study of the metal-insulator phase transitions inVO2,V6O13, andV2O3 Physical Review B. ,vol. 41, pp. 4993- 5009 ,(1990) , 10.1103/PHYSREVB.41.4993