作者: Nurul Hanis Azhan , Kui Su , Kunio Okimura , Mustapha Zaghrioui , Joe Sakai
DOI: 10.1063/1.4923223
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摘要: We report the first observation of large crystalline domains several μm-size in VO2 films deposited on Al2O3 (001) substrates by rf-biased reactive sputtering technique. The domains, dominated with random in-plane oriented growth (011)M1-orientation, appear only under adequate substrate biasing, such as 10 W, while most biasing conditions result conventional nanosized grains highly (010)M1-orientation. Two temperature-controlled analyses, x-ray diffraction and micro-Raman spectroscopy, have revealed that some parts undergo intermediate monoclinic (M2) phase during thermally-induced structural transition from (M1) to rutile-tetragonal (R) phase. As an effect appearance film showed tensile stress, resulting high TIMT 69 °C due elongation V-V distance its low-temperature