Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition
作者： I. Volintiru , M. Creatore , B. J. Kniknie , C. I. M. A. Spee , M. C. M. van de Sanden
DOI: 10.1063/1.2772569
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摘要: Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), properties the investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force (AFM), recoil detection (ERD), Rutherford backscattering (RBS), time flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that working pressure plays an important role in controlling sheet resistance Rs roughness development during film growth. At 1.5 mbar AZO are highly conductive (Rs 4% thickness), however, they characterized a large gradient with increasing thickness. By decreasing to 0.38 mbar, is significa...
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