Plasma Processes and Film Growth of Expanding Thermal Plasma Deposited Textured Zinc Oxide
作者： Roland Groenen , Hans Linden , Richard van de Sanden
关键词:
摘要: Plasma processes and film growth of textured zinc oxide deposited from oxygen diethyl utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess ions low temperature electrons available, which represent the chemistry taking place. The induced decomposition mechanism involves charge exchange with ions, consecutive dissociative recombination emanating source. presence reactive atomic species, specifically Zn* O*, confirmed help optical emission spectroscopic measurements. absence residual carbon in films suggests involving dissociation Zn-C bonds instead at surface. Film appears to proceed adsorption particular followed subsequent reaction oxygen, deposition rate being directly proportional arrival species. It suggested that adsorbs on surface weakly bounded highly mobile state. Best intrinsic transparent conducting quality, conductivity, obtained highest rate.
core.ac.uk
narcis.nl参考文章(48)
S. Suh, L. A. Mîinea, D. M. Hoffman, Z. Zhang, W.-K. Chu, Atmospheric pressure chemical vapor deposition of undoped zinc oxide films from a zinc amide precursor Journal of Materials Science Letters. ,vol. 20, pp. 115- 118 ,(2001) , 10.1023/A:1006777915520
Anthony O’Keefe, David A. G. Deacon, Cavity ring‐down optical spectrometer for absorption measurements using pulsed laser sources Review of Scientific Instruments. ,vol. 59, pp. 2544- 2551 ,(1988) , 10.1063/1.1139895
B.S. Li, Y.C. Liu, Z.Z. Zhi, D.Z. Shen, Y.M. Lu, J.Y. Zhang, X.G. Kong, X.W. Fan, Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition Thin Solid Films. ,vol. 414, pp. 170- 174 ,(2002) , 10.1016/S0040-6090(02)00491-1
T. Maruyama, J. Shionoya, Zinc oxide thin films prepared by chemical vapour deposition from zinc acetate Journal of Materials Science Letters. ,vol. 11, pp. 170- 172 ,(1992) , 10.1007/BF00724682
Chris G. Van de Walle, Hydrogen as a cause of doping in zinc oxide Physical Review Letters. ,vol. 85, pp. 1012- 1015 ,(2000) , 10.1103/PHYSREVLETT.85.1012
Joshua J. Robbins, James Esteban, Cassandra Fry, Colin A. Wolden, An Investigation of the Plasma Chemistry Involved in the Synthesis of ZnO by PECVD Journal of The Electrochemical Society. ,vol. 150, ,(2003) , 10.1149/1.1605746
Shunri Oda, Hiroyuki Tokunaga, Nobuyuki Kitajima, Jun-ichi Hanna, Isamu Shimizu, Hiroshi Kokado, Highly Oriented ZnO Films Prepared by MOCVD from Diethylzinc and Alcohols Japanese Journal of Applied Physics. ,vol. 24, pp. 1607- 1610 ,(1985) , 10.1143/JJAP.24.1607
Tadatsugu Minami, Hideo Sonohara, Shinzo Takata, Hirotoshi Sato, Transparent and Conductive ZnO Thin Films Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Zinc Acetylacetonate Japanese Journal of Applied Physics. ,vol. 33, ,(1994) , 10.1143/JJAP.33.L743
Robert L. Jackson, Metal-alkyl bond dissociation energies for (CH3)2Zn, (C2H5)Zn, (CH3)2Cd, and (CH3)2Hg Chemical Physics Letters. ,vol. 163, pp. 315- 322 ,(1989) , 10.1016/0009-2614(89)85142-5
R. Solanki, G. J. Collins, Laser induced deposition of zinc oxide Applied Physics Letters. ,vol. 42, pp. 662- 663 ,(1983) , 10.1063/1.94064