High-resolution electron microscope observation of medium-range atomic ordering in amorphous alloy

摘要: Abstract Amorphous Pd82Si18 thin films were prepared by the argon-beam sputtering technique. The specimens deposited on NaCl substrates with a substrate temperature of 293 K. An investigation medium-range order (MRO) and its relation to structural relaxation decomposition annealing has been made means high-resolution electron microscopy, nano-beam diffraction elemental analysis. Domains fcc MRO observed in as-sputtered film. At initial stage annealing, number domains increases they grow increasing temperature. This corresponds that relaxation. large grown become nano-precipitates which may be called ‘nuclei α-Pd precipitates’. lattice parameter becomes closer pure size precipitates. Si composition (nano-)precipitates starts decrease when is increased 523