Method for forming thin semiconductor film, method for fabricating semiconductor device, system for executing these methods and electro optic device

作者: Hideo Yamanaka

DOI:

关键词: Monocrystalline siliconPolycrystalline siliconSemiconductorSubstrate (electronics)Electronic engineeringCrystalliteCrystallizationThin filmOptoelectronicsSemiconductor deviceMaterials science

摘要: The present invention provides a method capable of easily forming polycrystalline or monocrystalline semiconductor thin film silicon with high degree crystallization and quality at low cost, an apparatus for carrying out the method. In (or monocrystalline) film, manufacturing device these methods, in order to form large-grain ( 7 ) such as on substrate 1 having ), low-crystalline A) is formed then heated molten, semi-molten non-molten state by laser annealing ultraviolet rays (UV) or/and deep (DUV) cooled promote A), obtaining ).

参考文章(5)
Hongyong Zhang, Shunpei Yamazaki, Yasuhiko Takemura, Process for laser processing and apparatus for use in the same ,(2003)
幸一郎 田中, Koichiro Tanaka, Beam homogenizer and laser radiator ,(2000)
Susumu Konno, 啓介 古田, Keisuke Furuta, 周一 藤川, Shuichi Fujikawa, Tetsuo Kojima, Kenji Yoshizawa, 哲夫 小島, Yoko Morita, 陽子 森田, 憲治 吉沢, 進 今野, Laser annealing system ,(1998)
Yoshinao Taketomi, Teru Nishitani, 義尚 武富, 輝 西谷, Manufacture of thin-film transistor and laser annealing apparatus ,(1998)