作者: Hideo Yamanaka
DOI:
关键词: Monocrystalline silicon 、 Polycrystalline silicon 、 Semiconductor 、 Substrate (electronics) 、 Electronic engineering 、 Crystallite 、 Crystallization 、 Thin film 、 Optoelectronics 、 Semiconductor device 、 Materials science
摘要: The present invention provides a method capable of easily forming polycrystalline or monocrystalline semiconductor thin film silicon with high degree crystallization and quality at low cost, an apparatus for carrying out the method. In (or monocrystalline) film, manufacturing device these methods, in order to form large-grain ( 7 ) such as on substrate 1 having ), low-crystalline A) is formed then heated molten, semi-molten non-molten state by laser annealing ultraviolet rays (UV) or/and deep (DUV) cooled promote A), obtaining ).