Method for forming polysilicon using high energy radiation source

摘要: A method for forming polysilicon using high energy sources of radiation includes the steps providing a laser system which has at least two with different wavelengths, dichroic mirror, reflecting mirror and substrate; generating beam by to irradiate towards substrate perpendicularly are faced source meet certain angle; placing above mirror; semiconductor thin-film material on substrate. The advantages technical solution that as follows: crystallization rate poly-silicon is effectively increased; usage frequency excimer reduced; cost thereof throughput annealing affectively improved.