MIS capacitor and method of formation
作者： Garo J. Derderian , Cem Basceri
DOI:
关键词: Atomic layer deposition 、 MIS capacitor 、 Stack (abstract data type) 、 Electronic engineering 、 Dielectric 、 Nitride 、 Composite material 、 Oxide 、 Materials science 、 Capacitance 、 Layer (electronics)
摘要: An MIS capacitor with low leakage and high capacitance is disclosed. A layer of hemispherical grained polysilicon (HSG) formed as a lower electrode. Prior to the dielectric formation, may be optionally subjected nitridization or anneal process. aluminum oxide (Al2O3), composite stack interleaved layers other metal materials, fabricated over after optional The (Al2O3) post-deposition treatment further increase decrease current. nitride upper electrode by deposition technique atomic deposition.
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