Boron-doped titanium nitride layer for high aspect ratio semiconductor devices
作者： Ammar Derraa , Paul Castrovillo , Sujit Sharan
DOI:
关键词:
摘要: Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The useful providing electrical connection to active beneath an insulation layer integrated circuits such as memory devices. comprise boron-doped TiCl4-based titanium nitride, possess sufficient level adhesion insulative eliminate peeling from sidewalls of contact opening cracking when formed thickness greater than about 200 angstroms.
google.de 参考文章(19)
Christophe Heau, Boron-doped titanium nitride coatings and coated parts ,(1997)
Ralf Hedemann, Ralf Lubjahn, Procedure for blocking certain international mobile subscriber identity ranges of prepaid and postpaid smart cards ,(2001)
Ammar Derraa, Paul Castrovillo, Sujit Sharan, Diffusion barrier layer for semiconductor wafer fabrication ,(2001)
Gurtej S. Sandhu, Vishnu K. Agarwal, Boron incorporated diffusion barrier material ,(2003)
Philip J. Ireland, Howard E. Rhodes, Sujit Sharan, Kirk Prall, Gurtel Sandhu, Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture ,(1997)
Gurtej Singh Sandhu, Sujit Sharan, Trung T. Doan, Kirk Prall, Method of forming titanium silicide and titanium by chemical vapor deposition ,(1997)
Sujit Sharan, Ravi Iyer, Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants ,(2003)
Brian A. Vaartstra, Difunctional amino precursors for the deposition of films comprising metals ,(1997)
Gurtej S. Sandhu, Sujit Sharan, Method of forming an electrical contact to a silicon substrate ,(1998)