Spatially resolved lifetime imaging of silicon wafers by measurement of infrared emission

摘要: The measurement of infrared absorption excess carriers is a successful technique by which images the free carrier density and recombination lifetime in silicon can be generated. Carrier imaging (CDI) has recently been developed as powerful tool one obtains such images. This article analyzes both effect due to emission radiation silicon. former basis existing CDI whereas this describes based on latter effect. Both methods allow obtain with high spatial resolution order seconds measure actual lifetimes. These techniques are contactless nondestructive. mode facilitates low-lifetime wafers seconds.