Epitaxial thin films of topological insulator Bi2Te3 with two-dimensional weak anti-localization effect grown by pulsed laser deposition
作者： S.X. Zhang , L. Yan , J. Qi , M. Zhuo , Y.-Q. Wang
DOI: 10.1016/J.TSF.2012.07.012
关键词: Thin film 、 High-temperature superconductivity 、 Analytical chemistry 、 Pulsed laser deposition 、 Silicon 、 Topological insulator 、 Optoelectronics 、 Rutherford backscattering spectrometry 、 Surface states 、 Bismuth telluride 、 Materials science
摘要: … (lower pressure gives more Te deficiency; higher pressure … ~ 50 nm show a 3-D component of WAL in addition to the 2-D … the carrier concentration is higher than MBE films. The 2-D …
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