Pulsed laser deposition of Bi2Te3-based thermoelectric thin films
作者： Raghuveer S. Makala , K. Jagannadham , B. C. Sales
DOI: 10.1063/1.1600524
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摘要: Thin films of p-type Bi0.5Sb1.5Te3, n-type Bi2Te2.7Se0.3, and (Bi2Te3)90(Sb2Te3)5(Sb2Se3)5 (with 0.13 wt % SbI3) were deposited on substrates mica aluminum nitride (on silicon) using pulsed laser ablation at substrate temperatures between 300 °C to 500 °C. The characterized x-ray diffraction transmission electron microscopy for crystalline quality epitaxial growth the substrates. surface morphology microstructure examined scanning microscopy. X-ray mapping energy-dispersive spectroscopy performed determine nonstoichiometry in composition homogeneity. films, terms stoichiometric crystal perfection, was studied as a function temperature fluence. values Seebeck coefficient, electrical resistivity, Hall mobility thin measured compared with those bulk. Thermoelectric figure merit evaluated from ...
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