Pulsed Electroplating: a Derivate Form of Electrodeposition for Improvement of (Bi1−xSbx)2Te3 Thin Films
作者： Virginie Richoux , Sebastien Diliberto , Clotilde Boulanger
DOI: 10.1007/S11664-009-1054-2
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摘要: Bismuth antimony telluride (Bi1−xSbx)2Te3 thermoelectric compounds were synthesized by pulse plating. Due to the large number of parameters available (pulse waveform, on/off time, applied current density), this advanced form electrodeposition allows better control interfacial supply and electrochemical reactions offers effective ways improve macroscopic properties such as adhesion produce crack-free hard deposits fine-grained films with higher uniformity lower porosity. The influence time ton, cathodic density Jc) on stoichiometry, roughness, crystallography was studied. (electrical resistivity Seebeck coefficient) measured. results revealed that have p-type conductivity directly after electroplating (Seebeck coefficient around 150 μV K−1), in contrast direct current, which require annealing. An improvement observed: for a direct-current-deposited film is 5000 μΩ m, whereas pulse-deposited 200 m.
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