Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands
作者： O. V. Vakulenko , S. V. Kondratenko , Y. N. Kozyrev , None
DOI: 10.1007/S10853-011-5528-2
关键词: Condensed matter physics 、 Atomic electron transition 、 Materials science 、 Epitaxy 、 Ground state 、 Photocurrent 、 Heterojunction 、 Absorption edge 、 Photoconductivity 、 Rectangular potential barrier
摘要: Interband optical transitions in multilayer heterostructures with SiGe nanoislands were investigated using photocurrent spectroscopy and photo-emf. The n-p containing Ge the area of potential barrier prepared by molecular-beam epitaxy at temperature about 500 °C. It was shown that electron from ground state valence band a to conduction Si surrounding made main contribution into vertical photo-emf range 0.75–1.05 eV, which is below interband absorption edge Si. lateral photoconductivity observed 0.63–0.8 eV 77 K can be attributed indirect nanoisland L-state nanoisland. Analysis Raman scattering spectra revealed composition x 0.87, while elastic deformation value amounts exx = −0.016. calculated energies (0.63 eV) (0.81 fit experimental data rather good accuracy.
springer.com
harvard.edu
sci-hub.se 参考文章(22)
Klara Lyutovich, Erich Kasper, Properties of Silicon Germanium and SiGe: Carbon ,(1999)
P. P Gorbik, A. P Shpak, Nanomaterials and supramolecular structures : physics, chemistry, and applications Springer. ,(2009)
O. V. Vakulenko, S. V. Kondratenko, S. L. Golovinskiy, None, Photocurrent spectroscopy of indirect transitions in Ge/Si multilayer quantum dots at room temperature Surface Science. ,vol. 601, ,(2007) , 10.1016/J.SUSC.2007.03.011
Lorenzo Colace, Gianlorenzo Masini, Gaetano Assanto, Hsin-Chiao Luan, Lionel, K Kimerling, Fast Ge-on-Si Photodetectors for the Near Infrared ECS Transactions. ,vol. 3, pp. 85- 97 ,(2006) , 10.1149/1.2355797
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, Yu. Yu. Proskuryakov, Interlevel Ge/Si quantum dot infrared photodetector Journal of Applied Physics. ,vol. 89, pp. 5676- 5681 ,(2001) , 10.1063/1.1346651
Chris G. Van de Walle, Band lineups and deformation potentials in the model-solid theory. Physical Review B. ,vol. 39, pp. 1871- 1883 ,(1989) , 10.1103/PHYSREVB.39.1871
A. V. Baranov, A. V. Fedorov, T. S. Perova, R. A. Moore, V. Yam, D. Bouchier, V. Le Thanh, K. Berwick, Analysis of strain and intermixing in single-layer Ge ∕ Si quantum dots using polarized Raman spectroscopy Physical Review B. ,vol. 73, pp. 075322- ,(2006) , 10.1103/PHYSREVB.73.075322
S.-W. Lee, C. J. Park, T. W. Kang, H. Y. Cho, K. Hirakawa, Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors Semiconductor photodetectors. Conference. ,vol. 5726, pp. 146- 152 ,(2005) , 10.1117/12.588445
Arnold Alguno, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima, Yasuhiro Shiraki, Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Applied Physics Letters. ,vol. 83, pp. 1258- 1260 ,(2003) , 10.1063/1.1600838
B. V. Kamenev, E.-K. Lee, H.-Y. Chang, H. Han, H. Grebel, L. Tsybeskov, T. I. Kamins, Excitation-dependent photoluminescence in Ge∕Si Stranski-Krastanov nanostructures Applied Physics Letters. ,vol. 89, pp. 153106- ,(2006) , 10.1063/1.2361198