Photocurrent spectroscopy of indirect transitions in Ge/Si multilayer quantum dots at room temperature
作者： O. V. Vakulenko , S. V. Kondratenko , S. L. Golovinskiy , None
DOI: 10.1016/J.SUSC.2007.03.011
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摘要: Abstract Lateral photoconductivity spectra of multilayer Ge/Si heterostructures with Ge quantum dots were studied in the work proposed at room temperature. The photocurrent minimal energy 0.48–0.56 eV that is smaller than band gap was observed from such structures geometry waveguide excitation. Generation limit explained by spatially indirect electron transitions heavy hole states SiGe valence into Δ 2 -valley conduction Si surrounding. It found out decreased, as number dot layers increased.
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