Passivation and reflector structure for electroluminescent devices
作者： Neville Connell , William Streifer , Donald R. Scifres
DOI:
关键词: Optics 、 Semiconductor 、 Passivation 、 Layer (electronics) 、 Refractive index 、 Germanium 、 Optoelectronics 、 High-refractive-index polymer 、 Materials science 、 Tellurium 、 Bismuth
摘要: A passivation layer of perylene and its incorporation in three reflector structure deposited on the light emitting surface a semiconductor electroluminescent device is disclosed. The comprises low refractive index material, high material material. Preferably refraction for excess 3.5 materials this may be antimony, bismuth, tellurium, selenium, germanium, arsenic, sulfur, admixtures thereof. Admixtures include chemically diordered crystalline or amorphous alloys arsenic germanium. Examples are Al 2 O 3 , MgF SiO ZnO perylene.
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