Passivation of semiconductor laser facets

摘要: A method of passivating an edge-emitting semiconductor diode laser and the resultant product. Laser bars are cleaved in air from a wafer containing multiple bars. The placed into vacuum processing chamber which two steps performed without breaking vacuum. first step includes cleaning facets including removing native oxide by, for example, low-energy ion beam or by electron cyclotron resonance (EAR) plasma hydrogen possibly argon xenon with being negatively biased. second coating cleaned thin passivation layer hydrogenated amorphous silicon (a-Si:H), whereby intervening oxide. low oxygen partial pressure no more than 10 −8 Torr is maintained between deposition, both preferably done same chamber. Also preferably, anti-reflective highly reflective coatings deposited on returning to air.