Surface passivation of silicon based wafers
作者： Andreas Bentzen , Bengt Svensson , Alexander Ulyashin , Erik Sauar , Arve Holt
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摘要: The surface recombination velocity of a silicon sample is reduced by deposition thin hydrogenated amorphous or carbide film, followed nitride film. further decreased subsequent anneal. Silicon solar cell structures using this new method for efficient reduction the claimed.
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