Silicon thin film member
作者： Hidetoshi Nozaki , Hisanori Ihara
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摘要: A silicon thin film member according to the present invention comprises a supporting substrate and an a-Si formed by plasma CVD including hydrogen. The has distribution of hydrogen density in which content maximum value 1×10 22 atoms/cm 3 or more position 20 nm less away from interface between substrate, is larger than on interface. decreases toward direction film.
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