Method of producing hydrogenated amorphous silicon film

摘要: This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH 4 ) or other gases comprising H and Si, from a tungsten carbon foil heated temperature of about 1400°-1600° C., in vacuum 10 -6 19 -4 torr, form gaseous mixture atomic hydrogen silicon, depositing said gaseos onto substrate independent outside source thermal decomposition, silicon. The presence an ammonia atmosphere the chamber enhances photoconductivity film.