High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces
作者： N. Otsuka , L. A. Kolodziejski , R. L. Gunshor , S. Datta , R. N. Bicknell
DOI: 10.1063/1.95865
关键词: Epitaxy 、 Microstructure 、 Crystallography 、 Optoelectronics 、 Molecular beam epitaxy 、 Solid-state physics 、 Substrate (electronics) 、 Cadmium telluride photovoltaics 、 Thin film 、 Materials science 、 Electron microscope
摘要: CdTe films have been grown on (100) GaAs substrates with two different epitaxial relations: (111)CdTe∥(100)GaAs and (100)CdTe∥(100)GaAs. High resolution electron microscope observation of these types interfaces was carried out in order to investigate the role substrate surface microstructure determining which type epitaxy occurs. The interface former shows a direct contact between crystals, while latter has very thin layer (∼10 A thickness), is most likely an oxide, crystals. These observations suggest that preheating cycle prior film growth crucial occurs this system.
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