Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors
作者： Naresh Chand , Russ Fischer , Tim Henderson , John Klem , William Kopp
DOI: 10.1063/1.95024
关键词: Heterostructure-emitter bipolar transistor 、 Bipolar junction transistor 、 Materials science 、 Transistor 、 Heterojunction 、 Optoelectronics 、 Electric current 、 Homojunction 、 Common emitter 、 Heterojunction bipolar transistor 、 Physics and Astronomy (miscellaneous)
摘要: Details of the temperature dependence current gain in AlGaAs/GaAs heterojunction bipolar transistors (HBT’s) are reported for first time. Unlike homojunction transistors, initially increases with decreasing from 425 K followed by a decrease towards 77 at which is dependent on AlAs mole fraction emitter. Variation much smaller than what normally seen adding another advantage favor HBT’s. Hole injection into emitter and parasitic recombination currents shown to be reasons observed gain.
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