Low temperature performance of pure ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar microwave transistors

摘要: All ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors (DHBTs) are experimentally demonstrated to operate down liquid nitrogen temperature with a breakdown (BVceo) voltage of 7.6 V at 0.05 kA/cm2 which is achieved despite collector thickness only 2000 A and heavy dipole doping 4 × 1018 cm−3. The wafers were Molecular Beam Epitaxy grown without resorting any complex growth techniques such as CHIRP (coherent heterointerfaces for reflection penetration) superlattice or quaternary alloys grading. Gummel plot shows finite current gain varying from 4 30, was varied over six orders magnitude (from 7 nA 7 mA), up density 50 kA/cm2 77 K. resulted high relatively better stability in comparison SiGe make these microwave devices relaxed geometry (1 × 15) µm2, fabricated using simple optical lithography suitable many low applications su...