Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor under microgravity conditions

摘要: We investigate the possibility of growing a uniform binary compound crystal in space, proposing new growth method. develop numerical calculation method for crystals, which convection induced by temperature and concentration differences solution is taken into account. How to determine shape movement solution-crystal interface during clearly explained more complicated than single-component crystals. The boundary fit employed solve this moving phase transition problem. applied analysis an InAs-GaAs semiconductor effect buoyancy under microgravity conditions on process investigated. It found that field disturbed and, as result, deformed convection, even when gravitational acceleration low 10-6 g, supposed be gravity level International Space Station will start operation 2004. also direction residual has strong process. Next, we analyse influence g-jitters Soret In fact, it have little macroscopic dependence generation supercooling not if g. Finally, discuss high-quality InGaAs crystals compositions space.