作者: A. Baldus , K.W. Benz
DOI: 10.1016/0022-0248(93)90833-I
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摘要: Abstract In this paper the fabrication of CuInSe 2 chalcopyrite single crystals by vertical Bridgman technique using non-stoichiometric Se 3 -rich congruent composition and a novel ampoule design is describe. Furthermore growth travelling heater method (THM) an solvent was investigated. The elemental as-grown semiconducting compounds their electrical properties are discussed correlated with predictions made intrinsic chemistry model.