作者: Vera Lyahovitskaya , Shachar Richter , Felix Frolow , Larissa Kaplan , Yishay Manassen
DOI: 10.1016/S0022-0248(98)00904-X
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摘要: Abstract Single crystals of CuInSe2 were prepared under conditions to suppress the occurrence twinning. This was accomplished by growth from an In melt traveling heater method keep temperature below that sphalerite–chalcopyrite phase transition. The resulting n-type and could be converted p-type a Se anneal. Both n characterized structurally X-ray diffraction, compositionally microprobe analyses, morphologically atomic force scanning electron microscopy, electrically. They found mostly homogeneous with mirror-like cleavage without twins.