Method of avoiding ampoule adhesion of ingots in Bridgman growth of CuInSe2

作者: L.S. Yip , I. Shih , C.H. Champness

DOI: 10.1016/0022-0248(93)90438-3

关键词:

摘要: … the melt and the molybdenum or titanium during the experiments. … of titanium wire showed no sign of adhesion between the ingot … ingots apparently taken place on the titanium surface. …

参考文章(14)
I. Shih, A.Vahid Shahidi, C.H. Champness, Preparation of crystalline CuInSe2 by directional freezing Journal of Crystal Growth. ,vol. 70, pp. 411- 414 ,(1984) , 10.1016/0022-0248(84)90295-1
W. S. Weng, L. S. Yip, I. Shih, C. H. Champness, Crystal growth of CuInSe2 by the Bridgman method Canadian Journal of Physics. ,vol. 67, pp. 294- 297 ,(1989) , 10.1139/P89-051
Z.A. Shukri, C.H. Champness, I. Shih, Boron nitride powder coating of ampoule for Bridgman-grown CuInSe2 Journal of Crystal Growth. ,vol. 129, pp. 107- 110 ,(1993) , 10.1016/0022-0248(93)90439-4
Kazuhito Yasuda, Yoshifumi Iwakami, Manabu Saji, Crystal growth of CdTe in a multi-zone vertical bridgman furnace with a PBN crucible Journal of Crystal Growth. ,vol. 99, pp. 727- 730 ,(1990) , 10.1016/S0022-0248(08)80015-2
B. Tell, P. M. Bridenbaugh, Photovoltaic properties and junction formation in CuInSe2 Journal of Applied Physics. ,vol. 48, pp. 2477- 2480 ,(1977) , 10.1063/1.324012
J. Parkes, R.D. Tomlinson, M.J. Hampshire, The fabrication of p and n type single crystals of CuInSe2 Journal of Crystal Growth. ,vol. 20, pp. 315- 318 ,(1973) , 10.1016/0022-0248(73)90099-7
T. F. Ciszek, Synthesis and crystal growth of copper indium diselenide from the melt Journal of Electronic Materials. ,vol. 14, pp. 451- 460 ,(1985) , 10.1007/BF02654018
J.L. Hurd, T.F. Ciszek, Growth and properties of CuInSe2 crystals from hydrothermal solution Journal of Crystal Growth. ,vol. 70, pp. 415- 419 ,(1984) , 10.1016/0022-0248(84)90296-3