Fabrication and study of bulk and thin film CuGa/sub 1-x/In/sub x/Se/sub 2/ and Cu(Ga/sub 1-x/In)/sub 3/Se/sub 5/ photovoltaic materials obtained by the close-spaced vapour transport technique (CSVT)

摘要: In this paper we present a preparation of new bulk and thin film photovoltaic materials, CuGa/sub 1-x/In/sub x/Se/sub 2/ Cu(Ga/sub x/)/sub 3/Se/sub 5/, for fabrication solar cells. The materials are synthesised by the Bridgman technique. elements Cu, Ga, In, Se placed in suitable proportions sealed vacuum flask under 10/sup -6/ torr. This undergoes slow thermal treatment upto temperature just above synthesis melting /spl cong/1100/spl deg/C then is cooled to ambient temperature. We have realised films close-spaced vapour transport (CSVT) technique closed tube, iodine acts as agent. samples characterised X-ray diffraction energy dispersive spectrometry. CSVT very simple low cost permits good quality crystalline be obtained with aim realising cells used conversion energy.