Selective area growth of high quality InP on Si (001) substrates
作者： G. Wang , M. R. Leys , R. Loo , O. Richard , H. Bender
DOI: 10.1063/1.3491554
关键词: Necking 、 Control methods 、 Germanium 、 Wide-bandgap semiconductor 、 Materials science 、 Buffer (optical fiber) 、 Surface roughness 、 Semiconductor 、 Crystallography 、 Optoelectronics 、 Annealing (metallurgy)
摘要: In this work, we demonstrate the selective area growth of high quality InP layers in submicron trenches on exactly (001) oriented Si substrates by using a thin Ge buffer layer. Antiphase domain boundaries were avoided annealing at surface roughening temperature to create additional atomic steps The mechanism step formation and corresponding density control method are illustrated. elimination antiphase from optimized layer, together with defect necking effect, yield defect-free top inside trenches.
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