Backside illuminated image sensor with global shutter and storage capacitor
作者： Guangbin Zhang , Hongli Yang , Tiejun Dai
DOI:
关键词: Photodiode 、 Image sensor 、 Optoelectronics 、 Method of image charges 、 Optics 、 Materials science 、 Pixel 、 Shutter 、 Capacitor
摘要: A backside illuminated imaging sensor pixel includes a photodiode region, circuitry and storage capacitor. The region is disposed within semiconductor die for accumulating an image charge. on the between frontside of region. overlaps at least portion capacitor included overlapping selectively coupled to temporarily store charges accumulated thereon.
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