Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate
作者： Carlo M. Orofeo , Hiroki Ago , Tatsuya Ikuta , Koji Takahasi , Masaharu Tsuji
DOI: 10.1039/C0NR00170H
关键词: Carbon nanotube actuators 、 Nanoelectronics 、 Silicon 、 Substrate (electronics) 、 Anisotropic etching 、 Nanotechnology 、 Carbon nanotube 、 Potential applications of carbon nanotubes 、 Materials science 、 Thermal oxidation
摘要: Directional controllability of single-walled carbon nanotubes (SWNTs) is an important issue for future nanoelectronics applications. For direct integration with modern electronics, aligned growth on SiO2/Si desirable. We developed a new method to horizontally align SWNTs directly substrate by creating trenches Si(100) through anisotropic etching followed thermal oxidation. The V-shaped highly improved the alignment and degree comparable step-templated crystals. also density due combination “trench-guided” gas-flow guided alignment. Our insights nanotube will greatly contribute large-scale nanoelectronic
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