Elemental mapping using the Ga 3d and In 4d transitions in the ε2 absorption spectra derived from EELS
作者： M.H. Gass , A.J. Papworth , T.J. Bullough , P.R. Chalker
DOI: 10.1016/J.ULTRAMIC.2004.06.007
关键词: Absorption spectroscopy 、 Analytical chemistry 、 Electron energy loss spectroscopy 、 Electron 、 Resolution (electron density) 、 Spectral line 、 Chemistry 、 Microscopy 、 Scattering 、 Scanning transmission electron microscopy
摘要: It is proposed that by using the valence-band states in electron energy loss spectroscopy, high-spatial resolution maps of quantitative elemental composition may be acquired with high acquisition rates. Further, it shown epsilon(2) spectrum instead single scattering data, noise observed transitions and associated significantly reduced. The spectra are derived through a Kramers-Kronig transformation from obtained scanning transmission microscope. Using occur absorption (<40eV), for III-V device structures have been produced. An example provided Ga 3d transition to map GaInNAs/GaAs laser structure. Weaker such as In 4d also used verify distribution.
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