Incorporation of Sb in InAs∕GaAs quantum dots
作者： S. I. Molina , A. M. Sánchez , A. M. Beltrán , D. L. Sales , T. Ben
DOI: 10.1063/1.2826546
关键词: Silicon 、 Crystallography 、 Materials science 、 Quantum dot 、 Epitaxy 、 Gallium arsenide 、 Scanning electron microscope 、 Dark field microscopy 、 Scanning transmission electron microscopy 、 Condensed matter physics 、 Electron energy loss spectroscopy
摘要: The formation of a quaternary InGaAsSb alloy is shown to occur in the core epitaxial GaSb capped InAs∕GaAs quantum dots emitting at 1.3μm. existence four constituent elements demonstrated by using spatially resolved low-loss electron energy loss spectroscopy and aberration-corrected high angle annular dark field scanning transmission microscopy. intermixing process giving rise this takes place despite large miscibility gap between InAs binary compounds, probably driven strain dots.
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