Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots
作者： J. M. Ulloa , J. M. Llorens , M. del Moral , M. Bozkurt , P. M. Koenraad
DOI: 10.1063/1.4755794
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摘要: The origin of the modified optical properties InAs/GaAs quantum dots (QD) capped with a thin GaAs1−xSbx layer is analyzed in terms band structure. To do so, size, shape, and composition QDs capping are determined through cross-sectional scanning tunnelling microscopy used as input parameters an 8 × 8 k·p model. As Sb content increased, there two competing effects determining carrier confinement oscillator strength: increased QD height reduced strain on one side QD-capping valence offset other. Nevertheless, observed evolution photoluminescence (PL) intensity cannot be explained strength between ground states, which decreases dramatically for Sb > 16%, where alignment becomes type II hole wavefunction localized outside layer. Contrary to this behaviour, PL similar (at 15 K) or even larger ...
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