1.55μm emission from InAs∕GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
作者： Denis Guimard , Shiro Tsukamoto , Masao Nishioka , Yasuhiko Arakawa
DOI: 10.1063/1.2337163
关键词: Gallium arsenide 、 Photoluminescence 、 Quantum dot 、 Antimony 、 Chemical vapor deposition 、 Layer (electronics) 、 Materials science 、 Optoelectronics 、 Inorganic chemistry 、 Substrate (electronics) 、 Metalorganic vapour phase epitaxy 、 Physics and Astronomy (miscellaneous)
摘要: The authors report a fabrication technique for redshifting the emission wavelength of InAs quantum dots (QDs) grown on GaAs substrate by metal organic chemical vapor deposition. By introducing an antimony irradiation step during QD growth, have achieved ground-state at 1.55μm (and beyond) from InAs∕GaAs QDs capped In0.24Ga0.76As strain-reducing layer (SRL) room temperature (RT). Photoluminescence intensity is strongly enhanced (×100) RT compared to Sb-free higher In-content SRL in which saturates wavelengths shorter than 1.51μm.
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