Dielectric breakdown caused by hole-induced-defect in thin SiO2 films
作者： Akinobu Teramoto , Kiyoteru Kobayashi , Yasuji Matsui , Makoto Hirayama
DOI: 10.1016/S0169-4332(97)80088-8
关键词: Dielectric 、 Condensed matter physics 、 Gate oxide 、 Oxide 、 Materials science 、 Thin film 、 Time-dependent gate oxide breakdown 、 Dielectric strength 、 Equivalent oxide thickness 、 Annealing (metallurgy)
摘要: Abstract The dielectric breakdown induced by substrate hot-hole injection has been investigated using p-channel MOSFETs with the gate oxide of thickness ranging from 60 to 120 A and it revealed that is hole Si even at low fields. positive charge ( Q PBD ) calculated integrating current independent field, but decreases rapidly decreasing thickness. Also, shown charges in SiO 2 film are removed annealing 250°C, while trap centers not disappeared. This suggests occurs a weak spot, which can capture charges.
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