Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress
作者： Eric M. Vogel , Monica D. Edelstein , John S. Suehle
DOI: 10.1016/S0167-9317(01)00650-5
关键词: Semiconductor 、 Gate oxide 、 Optoelectronics 、 Substrate (electronics) 、 Gate dielectric 、 Stress (mechanics) 、 Materials science 、 MOSFET 、 Silicon dioxide 、 Quantum tunnelling
摘要: Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from confirm that energetic electrons responsible for degradation stress conditions. suggest mechanisms other than trapping hot holes may be the dioxide.
elsevier.com
sci-hub.se 参考文章(31)
M.A. Alam, J. Bude, B. Weir, P. Silverman, A. Ghetti, D. Monroe, K.P. Cheung, S. Moccio, An anode hole injection percolation model for oxide breakdown-the "doom's day" scenario revisited international electron devices meeting. pp. 715- 718 ,(1999) , 10.1109/IEDM.1999.824251
G. Groeseneken, R. Degraeve, T. Nigam, G. Van den bosch, H.E. Maes, Hot carrier degradation and time-dependent dielectric breakdown in oxides Microelectronic Engineering. ,vol. 49, pp. 27- 40 ,(1999) , 10.1016/S0167-9317(99)00427-X
J. W. McPherson, R. B. Khamankar, A. Shanware, Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics Journal of Applied Physics. ,vol. 88, pp. 5351- 5359 ,(2000) , 10.1063/1.1318369
Kazunori Umeda, Takayuki Tomita, Kenji Taniguchi, Silicon dioxide breakdown induced by SHE (substrate hot electron) injection Electronics and Communications in Japan (Part II: Electronics). ,vol. 80, pp. 11- 19 ,(1997) , 10.1002/(SICI)1520-6432(199708)80:8<11::AID-ECJB2>3.0.CO;2-5
D. J. DiMaria, J. H. Stathis, Ultimate limit for defect generation in ultra-thin silicon dioxide Applied Physics Letters. ,vol. 71, pp. 3230- 3232 ,(1997) , 10.1063/1.120299
D. J. DiMaria, D. Arnold, E. Cartier, Impact ionization and positive charge formation in silicon dioxide films on silicon Applied Physics Letters. ,vol. 60, pp. 2118- 2120 ,(1992) , 10.1063/1.107081
Akinobu Teramoto, Kiyoteru Kobayashi, Yasuji Matsui, Makoto Hirayama, Dielectric breakdown caused by hole-induced-defect in thin SiO2 films Applied Surface Science. pp. 245- 248 ,(1997) , 10.1016/S0169-4332(97)80088-8
D. J. DiMaria, Explanation for the polarity dependence of breakdown in ultrathin silicon dioxide films Applied Physics Letters. ,vol. 68, pp. 3004- 3006 ,(1996) , 10.1063/1.116678
D. J. DiMaria, Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers Journal of Applied Physics. ,vol. 86, pp. 2100- 2109 ,(1999) , 10.1063/1.371016
S. K. Lai, Interface trap generation in silicon dioxide when electrons are captured by trapped holes Journal of Applied Physics. ,vol. 54, pp. 2540- 2546 ,(1983) , 10.1063/1.332323