The effect of intensity of excitation on CdSe/ZnS quantum dots: Opportunities in luminescence sensing
作者： Jens U. Sutter , David J. S. Birch , Olaf J. Rolinski
DOI: 10.1063/1.3534784
关键词: Photodarkening 、 Sapphire 、 Optoelectronics 、 Laser 、 Quantum dot 、 Nanoparticle 、 Luminescence 、 Excited state 、 Photoluminescence 、 Materials science
摘要: We report changes in the photophysical properties of core-shell type CdSe/ZnS quantum dots (QDs) under optical irradiation. QDs either aqueous solution or immobilized a silica sol gel matrix have been excited at different wavelengths and fluxes. Illumination sample with 140 fs 700 nm Ti:sapphire laser pulses peak power order 4 GW/cm2 caused gradual increase luminescence lifetime from an initial value 3.5 increasing to 4.5 ns intensity by ∼8%. Using about 16 GW/cm2 resulted shortening 3 decrease ∼75%. Both photobrightening photodarkening were fully reversible. discuss kinetics investigate suitability as sensors tunable parameters.
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