Charge carrier transport mechanisms in nanocrystalline indium oxide

摘要: Abstract The charge transport properties of nanocrystalline indium oxide (In2O3) are studied. A number nanostructured In2O3 samples with various nanocrystal sizes prepared by sol–gel method and characterized using techniques. mean nanocrystals size varies from 7–8 nm to 18–20 nm depending on the conditions their preparation. Structural characterizations performed means transmission electron microscopy X-ray diffraction. analysis dc ac conductivity in a wide temperature range (T = 50–300 K) shows that at high temperatures carrier takes place over conduction band low variable hopping mechanism can be observed. We find out transition one another depends size: rises when bigger size. average distance between two sites activation energy calculated basing temperature. Using random barrier model we show uniform taking our conclude regarded as disordered system.