Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films

摘要: Abstract The electrical properties of undoped SnO2 thin films prepared by the sol–gel technique were investigated conductivity measurements in a temperature range 50–200 K. Structural characterizations performed atomic force microscopy and X-ray diffraction. Optical samples also characterized optical absorption spectroscopy. different hopping models used to investigate characteristics conduction employed range. It was shown that three types behavior can be expected, nearest-neighbour at high temperatures, Mott variable-range low temperatures Efros–Shklovskii lower temperatures. criteria for observation these regions established transitional determined. experimentally determined critical transition orders magnitudes with what could expected based on calculations. Under analyses, compensation ratio