Scanning tunneling microscopy of InAs/Ga1−xInxSb superlattices
作者： A. Y. Lew , E. T. Yu , D. H. Chow , R. H. Miles
DOI: 10.1063/1.112673
关键词: Condensed matter physics 、 Scanning tunneling microscope 、 Superlattice 、 Materials science 、 Epitaxy 、 Electronic structure 、 Quantum tunnelling 、 Scanning tunneling spectroscopy 、 Monolayer 、 Molecular beam epitaxy
摘要: Cross‐sectional scanning tunneling microscopy and spectroscopy have been used to characterize InAs/Ga1−xInxSb strained‐layer superlattices grown by molecular‐beam epitaxy. Monolayer roughness of the interfaces is visible in atomically resolved images epitaxial layers. An asymmetry electronic structure between which InAs has on Ga1−xInxSb those also observed these images. Current‐voltage spectra obtained while into layers are found be strongly influenced extended superlattice states.
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